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ABB GTO二极管5SGA 30J4502
Asymmetric Gate turn-offThyristor 5SGA 30J4502VDRM = 4500 V ITGQM = 3000 A ITSM = 24103 A VT0 = 2.2 V rT = 0.6 mΩ VDcli
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2024-08-06 |
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ABB GTO二极管5SGA 20H4502
Gate turn-off Thyristor 5SGA 20H4502VDRM = 4500 VITGQM = 2000 A ITSM = 13 kA VT0 = 1.80 V rT = 0.85 mΩ VDClin = 2200 V
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2024-08-06 |
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ABB GTO二极管5SGA 06D4502
Asymmetric Gate turn-offThyristor5SGA 06D4502PRELIMINARYVDRM = 4500 VITGQM = 600 AITSM = 3103 AVT0 = 1.9 VrT = 3.5 mW VD
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2024-08-06 |
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ABB GTO二极管5SGA 30J2501
Gate turn-off Thyristor 5SGA 30J2501VDRM= 2500 VITGQM = 2800 A ITSM = 30 kA VT0 = 1.5 V rT = 0.33 m VDClink = 1400 V
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2024-08-06 |
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ABB GTO二极管5SGA 25H2501
Gate turn-off Thyristor5SGA 25H2501VDRM = 2500 VITGQM = 2500 AITSM = 16 kAVT0 = 1.66 VrT = 0.57 mW VDClin = 1400 V专利自
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2024-08-06 |
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ABB GTO二极管5SGA 20H2501
Gate turn-off Thyristor5SGA 20H2501VDRM = 2500 VITGQM = 2000 AITSM = 16 kAVT0 = 1.66 VrT = 0.57 mW VDClin = 1400 V专利自
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2024-08-05 |
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ABB GTO二极管5SGA 15F2502
Asymmetric Gate turn-offThyristor5SGA 15F2502VDRM =2500 VITGQM =1500 AITSM= 10103 AVT0=1.45 VrT=0.90 mWVDclink =1400 V
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2024-08-05 |
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ABB IGBT模块5SNA 1000G650300
供应ABB高压IGBT模块5SNA1000G6503005SNA 1000G650300HiPak IGBT moduleVCE = 6500 VIC = 1000 A超低损耗、坚固耐用的SPT++芯片
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2024-08-05 |
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