| 图片 |
标 题 |
更新时间 |
 |
ABB GTO二极管5SGF 40L4502
Asymmetric Gate turn-offThyristor5SGF 40L4502 VDRM = 4500 VITGQM = 4000 AITSM = 25103 AVT0 = 1.2 VrT = 0.65 mW VDclink =
|
2024-08-07 |
 |
ABB GTO二极管5SGA 40L4501
Asymmetric Gate turn-offThyristor 5SGA 40L4501VDRM = 4500 V ITGQM = 4000 A ITSM = 2510 3A VT0 = 2.1 V rT = 0.58 mWVDclin
|
2024-08-07 |
 |
ABB GTO二极管5SGA 30J4502
Asymmetric Gate turn-offThyristor 5SGA 30J4502VDRM = 4500 V ITGQM = 3000 A ITSM = 24103 A VT0 = 2.2 V rT = 0.6 mΩ VDcli
|
2024-08-06 |
 |
ABB GTO二极管5SGA 20H4502
Gate turn-off Thyristor 5SGA 20H4502VDRM = 4500 VITGQM = 2000 A ITSM = 13 kA VT0 = 1.80 V rT = 0.85 mΩ VDClin = 2200 V
|
2024-08-06 |
 |
ABB GTO二极管5SGA 06D4502
Asymmetric Gate turn-offThyristor5SGA 06D4502PRELIMINARYVDRM = 4500 VITGQM = 600 AITSM = 3103 AVT0 = 1.9 VrT = 3.5 mW VD
|
2024-08-06 |
 |
ABB IGBT模块5SLD1500J450350
ABB IGBT模块5SLD1500J450350ABB IGBT模块5SLD1500J4503505SLD 1500J450350HiPak Diode moduleVCE = 4500 VIC = 2x 1500 A超低损
|
2024-06-14 |
 |
ABB IGBT模块5SNA1500G450300
ABB IGBT模块5SNA1500G4503005SNA 1500G450300HiPak IGBT ModuleVCE = 4500 VIC = 1500 A超低损耗SPT++技术具有增加的二极管面积
|
2024-06-14 |
 |
ABB IGBT模块5SNA1500G450350
ABB IGBT模块5SNA1500G4503505SNA 1500G450350HiPak IGBT ModuleVCE = 4500 VIC = 1500 A超低损耗SPT++技术具有增加的二极管面积
|
2024-06-12 |
产品分类